LOW-FREQUENCY NOISE AND RANDOM TELEGRAPH SIGNALS IN 0.35-MU-M SILICONCMOS DEVICES

A detailed study of the low frequency noise in Si MOS devices from a 0 .35 mum CMOS technology is presented. The normalized drain current noi se WLSI(d)/I(d)2 has been systematically investigated at a fixed frequ ency and constant normalized drain current. In large area devices (>5- 7 mum2), the noise is typically 1/f-like, whereas, in small area devic es (less-than-or-equal-to 1 mum2), the noise stems from the contributi on of one or several RTS components. In large area devices, the 1/f no ise can easily be interpreted by a classical carrier number fluctuatio n model. A multi-RTS component scheme has to be employed in the case o f small area devices.