MICROSCOPIC MECHANISMS OF INTERFACE STATE GENERATION BY ELECTRICAL STRESS

Authors
STATHIS JH
Citation
Jh. Stathis, MICROSCOPIC MECHANISMS OF INTERFACE STATE GENERATION BY ELECTRICAL STRESS, Microelectronic engineering, 22(1-4), 1993, pp. 191-196
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
191 - 196
Database
ISI
SICI code
0167-9317(1993)22:1-4<191:MMOISG>2.0.ZU;2-1
Abstract
Interface state generation by hot electrons is studied using spin-depe ndent recombination. Hot electrons with average energy approximately 2 eV produce a paramagnetic recombination center, while hole annihilatio n at the Si/SiO2 interface does not produce this defect. The implicati ons of these results for microscopic models of interface defect creati on are discussed.