RADIATION-INDUCED INTERFACE STATES AND ESR EVIDENCE FOR ROOM-TEMPERATURE INTERACTIONS BETWEEN MOLECULAR-HYDROGEN AND SILICON DANGLING BONDSIN AMORPHOUS SIO2-FILMS ON SI

Authors
CONLEY JF LENAHAN PM
Citation
Jf. Conley et Pm. Lenahan, RADIATION-INDUCED INTERFACE STATES AND ESR EVIDENCE FOR ROOM-TEMPERATURE INTERACTIONS BETWEEN MOLECULAR-HYDROGEN AND SILICON DANGLING BONDSIN AMORPHOUS SIO2-FILMS ON SI, Microelectronic engineering, 22(1-4), 1993, pp. 215-218
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
215 - 218
Database
ISI
SICI code
0167-9317(1993)22:1-4<215:RISAEE>2.0.ZU;2-U
Abstract
We establish strong experimental evidence linking reactions between mo lecular hydrogen and E' enter hole traps to the radiation induced inte rface state generation process in metal/oxide/silicon (MOS) devices,