ANNEALING OF IRRADIATION-INDUCED POSITIVE OXIDE CHARGES IN SIO2 SI-MOS STRUCTURES AS DESCRIBED BY HYDROGEN REACTIONS/

Authors
WANG Y FAHRNER WR BRAUNIG D
Citation
Y. Wang et al., ANNEALING OF IRRADIATION-INDUCED POSITIVE OXIDE CHARGES IN SIO2 SI-MOS STRUCTURES AS DESCRIBED BY HYDROGEN REACTIONS/, Microelectronic engineering, 22(1-4), 1993, pp. 223-226
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
223 - 226
Database
ISI
SICI code
0167-9317(1993)22:1-4<223:AOIPOC>2.0.ZU;2-Q
Abstract
Annealing of irradiation induced oxide charges N(ot) following irradia tion is examined with respect to various biases and confirmed to be de scribed by a hydrogen related model where the consumption of the radio lytically released hydrogen is the mechanism.