ANNEALING AND CHARGING OF SLOW AND FAST STATES IN METAL-TUNNEL OXIDE-SILICON DIODES MEASURED USING CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE TECHNIQUES

Authors
ANDERSSON MO LUNDGREN P ENGSTROM O FARMER KR
Citation
Mo. Andersson et al., ANNEALING AND CHARGING OF SLOW AND FAST STATES IN METAL-TUNNEL OXIDE-SILICON DIODES MEASURED USING CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE TECHNIQUES, Microelectronic engineering, 22(1-4), 1993, pp. 235-238
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
235 - 238
Database
ISI
SICI code
0167-9317(1993)22:1-4<235:AACOSA>2.0.ZU;2-0
Abstract
Capacitance-voltage (C-V) techniques are used to obtain new informatio n on the effects of post-metallization annealing and charging of ultra -thin metal-tunnel oxide-silicon (MTOS) diodes, which we have previous ly characterized mainly using variations in the tunnel current density . The interrelationships between the annealing and charging and the na ture of the defects are further illuminated in this work because of th e ability of the C-V techniques to distinguish between charges contain ed in slow and fast states.