ELECTRICAL STUDIES OF THE REACTIONS BETWEEN ETHANOL VAPORS AND INVERSION MODE SI-THIN SIO2 STRUCTURES

Processes taking place in Si-thin SiO2 Structures after exposure to et hanol vapours have been investigated through inversion channel I - V c haracteristics. It has been established that the changes in the Si - S iO2 structure under the action of ethanol vapours relax with time afte r their removing and the extent of relaxation depends on the drain vol tage duration as well as on the time interval separation of the drain voltage pulses. The ethanol vapours-introduced positive charge in the Si - SiO2 Structure is connected to the surface oxide charge.