HOT-CARRIER STRESS EFFECTS IN P-MOSFETS - PHYSICAL EFFECTS RELEVANT FOR CIRCUIT OPERATION

Authors
WEBER W BROX M VONSCHWERIN A THEWES R
Citation
W. Weber et al., HOT-CARRIER STRESS EFFECTS IN P-MOSFETS - PHYSICAL EFFECTS RELEVANT FOR CIRCUIT OPERATION, Microelectronic engineering, 22(1-4), 1993, pp. 253-260
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
253 - 260
Database
ISI
SICI code
0167-9317(1993)22:1-4<253:HSEIP->2.0.ZU;2-O
Abstract
This paper presents a discussion of the present status of understandin g p-channel MOSFET degradation. Various published time dependences are reviewed. On the basis of the logarithmic time dependence we develop a model with the essential feature being a region of trapped charges s preading logarithmically over time in the direction of source. Evidenc es for and against this model are discussed in detail. Finally, applic ations in conjunction with lifetime extrapolations for digital operati on and with the degradation of analog device parameters are presented.