HIGH-RESOLUTION SPIN-DEPENDENT RECOMBINATION STUDY OF HOT-CARRIER DAMAGE IN SHORT-CHANNEL MOSFETS - SI-29 HYPERFINE SPECTRA

We use extremely high sensitivity spin dependent recombination (SDR) m easurements to evaluate hot hole injection induced damage in short cha nnel MOSFETs. Our Si-29 hyperfine SDR results provide a moderately pre cise measure of hot carrier defect electronic localization, hybridizat ion, and (arguably) defect back bond angles. Our results futhermore pr ovide a dramatic illustration of the power of SDR to provide detailed analytical information about individual transistors in real integrated circuits. To the best of our knowledge, our results represent the mos t sensitive magnetic resonance measurements of any kind ever made in s olids.