INVESTIGATION OF HOT-CARRIER-INDUCED DEGRADATION IN 0 1-MU-M CHANNEL-LENGTH N-MOSFETS

Ultra-short n-channel MOS transistors with gate lengths of 0.1 mum hav e been analyzed in terms of hot-carrier induced degradation. The aging , performed at maximum substrate current, was monitored using the tran sconductance, drain current and charge pumping current. The results su ggest that the degradation tends to be uniform, the degraded zone repr esenting a large portion of the channel. Device lifetimes in excess of 10 years are predicted for nominal conditions of operation.