ELECTRICAL CHARACTERIZATION OF OXIDIZED POROUS SILICON

Oxidised porous silicon has been considered as a promising candidate f or use as a buried oxide in SOI technology. A major advantage it offer s is that it makes possible the formation of fully isolated SOI struct ures with a high quality device layer. The paper reports for the first time, detailed investigation of several important electrical properti es, such as fixed charge, interface state density, conduction under hi gh field, and electron trapping, of thermally oxidised porous silicon.