SILICON INTERSTITIAL REACTIONS WITH THERMALLY GROWN SILICON DIOXIDE

Authors
TSAMIS C TSOUKALAS D GUILLEMOT N
Citation
C. Tsamis et al., SILICON INTERSTITIAL REACTIONS WITH THERMALLY GROWN SILICON DIOXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 363-366
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
363 - 366
Database
ISI
SICI code
0167-9317(1993)22:1-4<363:SIRWTG>2.0.ZU;2-3
Abstract
In this work we perform experiments using the silicon wafer bonding te chnique and we show that as silicon interstitials, generated by therma l oxidation, arrive at a non-oxidizing interface of silicon with a the rmally grown oxide, they diffuse through it. Our results indicate that the most probable transport vehicle are the SiO molecules.