LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSFETS - EXPERIMENTAL AND NUMERICAL-SIMULATION RESULTS

Authors
JOMAAH J BALESTRA F GHIBAUDO G
Citation
J. Jomaah et al., LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSFETS - EXPERIMENTAL AND NUMERICAL-SIMULATION RESULTS, Microelectronic engineering, 22(1-4), 1993, pp. 383-386
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
383 - 386
Database
ISI
SICI code
0167-9317(1993)22:1-4<383:LNISM->2.0.ZU;2-V
Abstract
The low-frequency noise in SOI MOSFET's is studied experimentally and by numerical simulations. The behaviors of devices with completely dep leted and partially depleted silicon film are investigated for various substrate biases. The importance of volume inversion in thin Si film is underlined. Moreover, the variations of the current noise around th e kink is analysed for thin and thick film devices.