A SYSTEMATIC INVESTIGATION OF RADIATION EFFECTS IN MOS SIMOX STRUCTURES/

Authors
IONESCU AM CRISTOLOVEANU S CHOVET A JARRON P HEIJNE E FACCIO F ROSSI G
Citation
Am. Ionescu et al., A SYSTEMATIC INVESTIGATION OF RADIATION EFFECTS IN MOS SIMOX STRUCTURES/, Microelectronic engineering, 22(1-4), 1993, pp. 391-394
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
391 - 394
Database
ISI
SICI code
0167-9317(1993)22:1-4<391:ASIORE>2.0.ZU;2-P
Abstract
This work presents the behaviour Of gate of the art SIMOX transistors under radiation conditions (up to 10 Mrad with a Co-60 source) as reve aled by multiple characterization techniques: static curves, current t ransients and noise measurements.