AN IMPROVED ANALYTICAL DESCRIPTION OF THIN-FILM SOI MOSFET IN THE ABOVE-THRESHOLD REGION

Authors
JURCZAK M JAKUBOWSKI A
Citation
M. Jurczak et A. Jakubowski, AN IMPROVED ANALYTICAL DESCRIPTION OF THIN-FILM SOI MOSFET IN THE ABOVE-THRESHOLD REGION, Microelectronic engineering, 22(1-4), 1993, pp. 395-398
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
395 - 398
Database
ISI
SICI code
0167-9317(1993)22:1-4<395:AIADOT>2.0.ZU;2-D
Abstract
A modified version of fully analytical Lim-Fossum model of SOI MOS tra nsistor has been presented. The modified model takes into account the dependence of the front, surface potential on both gate voltages. The great advantage of the model is that it has improved accuracy and has fully analytical form. Finally, in order to estimate the accuracy of t he model, it is compared to the numerical model.