A STUDY OF HIGH-FIELD CONDUCTION AND ELECTRON TRAPPING IN BURIED OXIDES PRODUCED BY SIMOX TECHNOLOGY

Authors
WAINWRIGHT SP NGWA C HALL S ECCLESTON W
Citation
Sp. Wainwright et al., A STUDY OF HIGH-FIELD CONDUCTION AND ELECTRON TRAPPING IN BURIED OXIDES PRODUCED BY SIMOX TECHNOLOGY, Microelectronic engineering, 22(1-4), 1993, pp. 399-402
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
22
Issue
1-4
Year of publication
1993
Pages
399 - 402
Database
ISI
SICI code
0167-9317(1993)22:1-4<399:ASOHCA>2.0.ZU;2-M
Abstract
Low Fowler-Nordheim barrier heights measured at SIMOX interfaces are a ttributed to points of field intensification causing preferential inje ction and an associated reduced injection area. This was taken into ac count in the analysis of constant voltage stress (CVS) experiments fro m which oxide electron trapping parameters were derived, Comparison of parameters from CVS and avalanche injection experiments indicate the efficacy of the CVS technique in identifying trap species for SOI.