X. Zhang et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 132(1-2), 1993, pp. 331-334
Molecular beam epitaxial (MBE) growth of a 60 angstrom thick InAs laye
r on GaAs (110) substrate was studied by reflection high energy electr
on diffraction (RHEED) and transmission electron microscopy (TEM). The
results indicate that 2D island nucleation and coalescence are involv
ed at the initial stage of deposition. Due to the surface geometry, as
ymmetric strain relief is observed in the InAs film: the relaxation in
the [110BAR] direction is almost complete, whereas a minimum of 2.7%
strain still remains in the [001] direction. The observation is compar
ed to that of a 60 angstrom InAs layer grown on a GaAs (001) substrate
under identical conditions.