REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY

Molecular beam epitaxial (MBE) growth of a 60 angstrom thick InAs laye r on GaAs (110) substrate was studied by reflection high energy electr on diffraction (RHEED) and transmission electron microscopy (TEM). The results indicate that 2D island nucleation and coalescence are involv ed at the initial stage of deposition. Due to the surface geometry, as ymmetric strain relief is observed in the InAs film: the relaxation in the [110BAR] direction is almost complete, whereas a minimum of 2.7% strain still remains in the [001] direction. The observation is compar ed to that of a 60 angstrom InAs layer grown on a GaAs (001) substrate under identical conditions.