GASB SINGLE-CRYSTALS DOPED WITH MANGANESE

[111] GaSb single crystals doped with manganese were grown using the C zochralski method without encapsulant in a reducing atmosphere of flow ing hydrogen. Using the Mn concentrations calculated from the Hall mea surement, the distribution coefficient (k(eff)) of manganese in GaSb w as estimated to be k(eff) = 0.011 +/- 0.001. The dislocation density, which increases along the growth direction, has also been found to be in contrast to other nonvolatile dopants in Gasb.