The crystal structure of a garnet is distinguished by a cubic unit cel
l containing eight formula units {A3}[B2](C3)O12, where the curly brac
kets, square brackets, and the parentheses respectively designate the
cation sites in the dodecahedral, octahedral, and tetrahedral coordina
tions with respect to oxygen. For materials with such a structure in g
eneral and, particularly, for yttrium-scandium-gallium garnet (YSGG) o
f the composition {Y3-xSex}[SeyGa2-y]Ga3O12, the difficulties in prepa
ring single crystals with given concentration and equilibrium distribu
tion of the basic components along the length and the transverse cross
section are caused for three main reasons: their unique crystal struc
ture (the existence of three crystallographic sites for the cations) a
nd specific properties of the Se atoms (the possibility of its distrib
ution over two or even all the three crystallographic sites); features
of their phase diagrams (the composition of the crystal corresponds t
o the composition of the melt only in the case of the congruently melt
ing compounds and is different in all the other cases); and substantia
l influence on the uniformity of the composition of the growing crysta
ls by the technological features of their preparation (the shape of th
e crystallization front), presence of growth defects such as, e.g., th
e 'faceting effect' and the growth striations. This work is devoted to
a study of the defect formation in the YSGG single crystals grown by
the Czochralski method.