ELECTRICAL CHARACTERIZATION OF SRBI2TA2O9 THIN-FILMS FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS

Authors
JONES RE ZURCHER P JIANG B WITOWSKI JZ LII YT CHU P TAYLOR DJ GILLESPIE SJ
Citation
Re. Jones et al., ELECTRICAL CHARACTERIZATION OF SRBI2TA2O9 THIN-FILMS FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics, 12(1), 1996, pp. 23-31
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
12
Issue
1
Year of publication
1996
Pages
23 - 31
Database
ISI
SICI code
1058-4587(1996)12:1<23:ECOSTF>2.0.ZU;2-Q
Abstract
Ferroelectric SiBi2Ta2O9 capacitors with Pt electrodes were measured t o have a non-volatile polarization of 6.6 mu C/cm(2) using 3 V pulse p olarization measurements, a leakage current of less than 3x10(-9) A/cm (2) at 3 V, and a breakdown of voltage greater than 20 V. The temperat ure dependence of hysteresis loops were measured to 200 degrees C and both the non-volatile polarization and coercive field were observed to decrease with temperature. Process damage caused by CVD of overlying dielectrics and contact window plasma etching was reversed by oxygen a nnealing. Good resistance against both fatigue and imprint were observ ed.