GROWTH OF (001) ORIENTED LA-SR-CO-O PB-LA-ZR-TI-O/LA-SR-CO-O FERROELECTRIC CAPACITORS ON (001)GAAS WITH A MGO BUFFER LAYER/

Thin film 0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2Ti0.3O3/La0.5Sr0.5CoO3 capacitor structures (LSCO/PLZT/LSCO) have been grown on (001) GaAs substrates with MgO as a buffer layer. The MgO films on GaAs were grown by pulsed laser deposition and electron-beam evaporation and the capacitor hete rostructures were grown using pulsed laser deposition. X-ray diffracti on (XRD) showed all films to be (001) oriented. Ferroelectric capacito rs were fabricated to determine their electrical behavior: the films s howed resistivity above 10(10) ohms/cm(2), a typical saturation polari zation of 20-30 mu C/cm(2), minimum retention loss, low time-dependent imprint and negligible fatigue up to 10(11) cycles. These characteris tics indicate that high-quality (001) oriented PLZT can be easily inte grated with GaAs substrates, and could be used to produce GaAs-based e lectrical and, more importantly, optical devices.