INTEGRATED FERROELECTRICS AS A STRATEGIC DEVICE

The ferroelectric memory is the most suitable device for memory embedd ed applications. Its manufacturing process makes it more compatible wi th the standard CMOS process than the traditional non-volatile memory processes, due to device operation voltage requirements. In addition, it provides clear advantages such as non-volatility, lower power consu mption, higher endurance on writing cycles and higher writing speed. T he most significant benefits of the embedded ferroelectric memory are shown on contactless smart IC cards and RF-ID cards without battery ba ckup, which will expand the electronic ID market in a variety of appli cations. A super high integration chip will not be produced without ha ving any redundancy circuit on it. If the ferroelectric memory technol ogy is applied to FPGA (field programmable gate array), however, this problem will be solved. The ferroelectric memory technology will lead to a new semiconductor device architecture, and will take the major pl ace in the coming multi-media era.