IN-SITU GROWTH OF PB(ZR0.5TI0.5)O-3 RUO2 HETEROSTRUCTURES ON SI(001) USING LOW-TEMPERATURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/

Citation
Cm. Foster et al., IN-SITU GROWTH OF PB(ZR0.5TI0.5)O-3 RUO2 HETEROSTRUCTURES ON SI(001) USING LOW-TEMPERATURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Integrated ferroelectrics, 14(1-4), 1997, pp. 23-31
Citations number
30
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
14
Issue
1-4
Year of publication
1997
Pages
23 - 31
Database
ISI
SICI code
1058-4587(1997)14:1-4<23:IGOPRH>2.0.ZU;2-Y
Abstract
Pb(Zr0.5Ti0.5)O-3/RuO2 thin film heterostructures were successfully gr own on SiO2/Si(001) substrates using metal-organic chemical vapor depo sition with a maximum processing temperature of 525 degrees C. To form the heterostructures, (110)-textured RuO2 electrode layers were first deposited on SiO2/Si(001) substrates at temperatures as low as 350 de grees C at a typical grow rate of similar to 40 Angstrom/min.. The res istivity of the RuO2 films was 30-40 mu Omega-cm. Plan-view transmissi on electron microscopy (TEM) and atomic force microscopy (AFM) showed that typical RuO2 films had a grain size of 800-1000 Angstrom with sur face roughness of 3-25 nm, respectively. Perovskite phase Pb(Zr0.5Ti0. 5)O-3 (PZT) was then deposited at 525 degrees C. The as-deposited film s exhibited a dense, randomly-oriented crystal structure with a grain size of similar to 800-1000 Angstrom. Using capacitors defined with Ag top electrodes, the film showed a remanent polarization of 21.5 mu C/ cm(2) and a coercive field of 39.0 kV/cm. The capacitors showed little fatigue up to similar to 10(10) cycles. The as-deposited films exhibi ted high resistivity (10(12)-10(13) Omega-cm at 100 kV/cm). The curren t versus voltage characteristics show that the films have typical diel ectric breakdown strengths of similar to 60 V/mu m with a sub-breakdow n leakage current density of 5 x 10(-5) A/cm(2).