DOMAIN-STRUCTURE OF EPITAXIAL PZT THIN-FILMS GROWN ON MGO(001) BY RF MAGNETRON SPUTTERING

Citation
Ks. Lee et al., DOMAIN-STRUCTURE OF EPITAXIAL PZT THIN-FILMS GROWN ON MGO(001) BY RF MAGNETRON SPUTTERING, Integrated ferroelectrics, 14(1-4), 1997, pp. 43-49
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
14
Issue
1-4
Year of publication
1997
Pages
43 - 49
Database
ISI
SICI code
1058-4587(1997)14:1-4<43:DOEPTG>2.0.ZU;2-K
Abstract
Epitaxial Pb(ZrxTi1-x)O-3 (x=0.0 similar to 0.32) thin-films were succ essfully grown on MgO(001) single crystal by RF magnetron sputtering. Lattice constants and crystal quality of the films were measured by th e X-ray theta-2 theta scan and the FWHM of (001) rocking curves, respe ctively. Degree of c axis orientation and crystal quality of the films improved gradually with increasing Zr concentration. High temperature X-ray technique was employed to study the domain formation as a funct ion of temperature during cooling from cubic phase to tetragonal phase . The initial values of a at the Curie temperature also increased with increasing Zr concentration.