PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED SRBI2TA2O9 FILMS AND INTEGRATION INTO CAPACITORS FOR NONVOLATILE MEMORIES

Pulsed laser ablation deposition (PLAD) was used to synthesize SrBi2Ta 2O9 (SET) layered ferroelectric thin films to integrate them into capa citors with top and bottom Pt electrodes produce by an ion beam sputte r-deposition technique. SBT layers produced by laser ablation of stoic hiometric and Bi-rich SBT targets exhibited marked different orientati ons. In addition, Pt/SBT/Pt capacitors fabricated with the distinctly oriented SET layers exhibited substantial difference in the shape and parameters of polarization hysteresis loops, although they exhibited p ractically-no polarization fatigue. The results presented in this pape r indicate that the composition, microstructure and properties of SBT layers and SBT-based capacitors depend on the target composition and m ore studies are needed to understand these dependencies.