CHARACTERISTICS OF FERROELECTRIC SRBI2TA2O9 THIN-FILMS GROWN BY FLASHMOCVD

A chemical vapor deposition process for the ferroelectric SrBi2Ta2O9 h as been developed utilizing a liquid delivery and flash vaporization t echnique. Uniform layered perovskite of SrBi2Ta2O9 was formed over 4 i nch wafers by the chemical vapor deposition followed by annealing at 8 00 degrees C in oxygen ambient. The SrBi2Ta2O9 thin film capacitors sh owed well saturated hysteresis loops with remanent polarization (2Pr) and coercive field (Ec) of up to 21.3 (mu C/cm(2)) and 47.2 (kV/cm), r espectively. The SrBi2Ta2O9 capacitors with platinum electrodes showed fatigue free characteristics after switching of 1 x 10(10) cycles. Th e chemical vapor deposition technique demonstrated excellent conformal coating of SrBi2Ta2O9 film on 0.5 mu m line-and-space patterns. These performances will meet the requirements for high-density nonvolatile memory devices.