EFFECTS OF SRF2 PHASE ON ELECTRICAL-PROPERTIES OF SRTIO3 THIN-FILMS DEPOSITED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The microstructure and electrical properties were investigated for SrT iO3(STO) thin films deposited on Pt/Ti/SiO2/Si(PTSS) and Pt/MgO(PM) su bstrates by plasma-enhanced metalorganic chemical vapor deposition (PE MOCVD). SrF2 phase existing in the STO films deposited on PM at 500 de grees C influences the dielectric constant, dissipation factor, and le akage current density of STO films. The dielectric constant and dissip ation factor of STO films on PTSS and PM at 500 degrees C were 210, 0. 02 and 140, 0.07 at 100 kHz, respectively. Leakage current densities o f STO films deposited on PTSS and PM at 500 degrees C were about 1.5 x 10(-8) A/cm(2) and 1.0 x 10(-6) A/cm(2) at 2 V, respectively. The lea kage current behavior regardless of SrF2 phase in STO films was contro lled by Schottky emission with. applied electric field.