ANALYSIS OF C-V AND I-V DATA OF BST THIN-FILMS

Thin films of Ba0.7Sr0.3TiO3 have been fabricated using Enhanced Metal Organic Decomposition (EMOD) process on Si/SiO2/Ti/Pt substrates. The C-V characteristics of these films reveal a relation of log(1/C-m) pr oportional to V-A where C-m is the measured capacitance at a frequency of 10 KHz and V-A is the applied voltage. This voltage variable capac itance is characterized by an inverse quadratic distance proportinal c harge distribution at the boundary layer between metal and paraelectri c material. Above a threshold voltage of 3-5 V the leakage current den sity exhibits a modified Schottky emission, which states that log (J(L )) proportional to V-1/4. Below this threshold voltage, the origin of the leakage current which is operative in normal circuit applications has been discussed and identified from its temperature variation.