HIGH RELIABLE LEAD-ZIRCONATE-TITANATE GROWTH USING REACTIVE SPUTTERING AND RAPID THERMAL ANNEALING

Authors
YAMAUCHI S YOSHIMARU M
Citation
S. Yamauchi et M. Yoshimaru, HIGH RELIABLE LEAD-ZIRCONATE-TITANATE GROWTH USING REACTIVE SPUTTERING AND RAPID THERMAL ANNEALING, Integrated ferroelectrics, 14(1-4), 1997, pp. 159-166
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
14
Issue
1-4
Year of publication
1997
Pages
159 - 166
Database
ISI
SICI code
1058-4587(1997)14:1-4<159:HRLGUR>2.0.ZU;2-O
Abstract
High reliable lead-zirconate-titanate (PZT) thin films were produced b y reactive sputter-deposition and rapid themal annealing (RTA). Severa l important parameters for the film growth were investigated such as g rowth temperature, substrate-biasing, target-substrate gap and film st oichiometry. X-Ray Diffraction and Scanning Electron Microscopy reveal ed a single (111)orientation and smooth surface of the controlled film s, respectively. Measurement of electric properties of the controlled 100nm-thick PZT films revealed low leakage current (about 2x10(-7)A/cm (2) at 3.5V) and without fatigue after 10(12) cycle bipolar switchings .