STRUCTURAL CHARACTERIZATION OF BA0.5SR0.5TIO3 ON RUO2 PREPARED BY PULSED-LASER DEPOSITION

Authors
JIA QX FINDIKOGLU AT ZHOU R FOLTYN SR WU XD
Citation
Qx. Jia et al., STRUCTURAL CHARACTERIZATION OF BA0.5SR0.5TIO3 ON RUO2 PREPARED BY PULSED-LASER DEPOSITION, Integrated ferroelectrics, 14(1-4), 1997, pp. 167-172
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
14
Issue
1-4
Year of publication
1997
Pages
167 - 172
Database
ISI
SICI code
1058-4587(1997)14:1-4<167:SCOBOR>2.0.ZU;2-1
Abstract
Highly conductive RuO2 thin films were epitaxially grown on (100) LaAl O3 substrates by pulsed laser deposition. The RuO2 film deposited with optimized conditions was (h00) oriented normal to the substrate surfa ce with strong in-plane orientation. The RuO2 thin films deposited at temperatures of above 500 degrees C demonstrated a room-temperature re sistivity of 35 +/- 2 mu Omega-cm. The Ba0.5Sr0.5TiO3 thin films depos ited on epi-RuO2 showed pure (111) orientation normal to the substrate surface, and exhibited dielectric constant above 600 and dielectric l oss of 0.03-0.05 at 100 kHz under zero dc bias.