EFFECT OF PBO CONTENT ON THE PROPERTIES OF SOL-GEL DERIVED PZT FILMS

The PbO content of lead zirconate titanate(PZT) films has been widely recognized as affecting not only the phase assembly and microstructure but also the dielectric and ferroelectric properties. Excess PbO has often been incorporated in PbO-based films to optimize the film proper ties by compensating for PbO loss either through volatilization or dif fusion into the substrates. Sol-gel derived PZT 53/47 films with vario us PbO contents, i.e., PbxZr0.53 Ti0.47O3 (x = 0.5 0.6, 0.7, 0.8, 0.9, 1.0, 1.05, 1.10, 1.25 and 1.5) were prepared on platinized Si wafer's and fired to temperatures ranging from 550C to 700C under oxygen. Mul tiple spincoating with an intermediate firing of 400C between coatings was performed to obtain films up to 0.5 mu m thick. After the final c rystallization firing, top Pt electrodes were sputtered to form monoli thic capacitors. These capacitors were subjected to dielectric and fer roelectric characterization using an impedance analyzer and a Radiant Technologies RT66A Ferroelectric Test System. XRD was used to study th e phase development and phase assembly of the fired films. The dielect ric and ferroelectric properties of the films are discussed with respe ct to the effects of PbO content on the phase assembly, microstructure and processing conditions.