DIELECTRIC-BREAKDOWN STRENGTH IN SOL-GEL DERIVED PZT THICK-FILMS

Citation
Hd. Chen et al., DIELECTRIC-BREAKDOWN STRENGTH IN SOL-GEL DERIVED PZT THICK-FILMS, Integrated ferroelectrics, 15(1-4), 1997, pp. 89-98
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
89 - 98
Database
ISI
SICI code
1058-4587(1997)15:1-4<89:DSISDP>2.0.ZU;2-0
Abstract
Dielectric DC breakdown strengths of ferroelectric lead zirconate tita nate (PZT) thick films are examined with respect to the film thickness , top electrode area, and grain size. The breakdown strengths of PZT(5 2/48) films are as much as two times higher than the predicted values empirically derived from bulk ceramics by earlier researchers. I-V cha racteristics show three distinct conduction mechanisms on 8 mu m PZT f ilms. Samples aged in air for one year show lower breakdown strengths, higher leakage currents, and higher onset voltages of the space-charg e-limited conduction (SCLC) mechanism.