SCANNING FORCE MICROSCOPY STUDY OF DOMAIN-STRUCTURE IN PB(ZRXTI1-X)O-3 THIN-FILMS AND PT PZT/PT AND RUO2/PZT/RUO2 CAPACITORS/

Authors
AUCIELLO O GRUVERMAN A TOKUMOTO H
Citation
O. Auciello et al., SCANNING FORCE MICROSCOPY STUDY OF DOMAIN-STRUCTURE IN PB(ZRXTI1-X)O-3 THIN-FILMS AND PT PZT/PT AND RUO2/PZT/RUO2 CAPACITORS/, Integrated ferroelectrics, 15(1-4), 1997, pp. 107-114
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
107 - 114
Database
ISI
SICI code
1058-4587(1997)15:1-4<107:SFMSOD>2.0.ZU;2-2
Abstract
A piezoresponse technique based on scanning force microscopy has been used for studying domain structure in ferroelectric thin films. Studie s were performed on Pb(Zr-x,Ti1-x)O-3 (PZT) thin films and PZT-based c apacitors with the ferroelectric layer produced by a sol-gel method. P iezoresponse images were taken for different systems materials: (a) be fore and after inducing polarization in PZT films by applying a dc vol tage between the bottom electrode and the SFM tip, and (b) on top elec trodes of fatigued and non-fatigued Pt/PZT/Pt and RuO2/PZT/RuO2 capaci tors. Effect of the PZT film and capacitor structures on the imaging r esolution of domains is discussed.