CHARACTERISTICS OF SRBI2TA2O9 THIN-FILMS FABRICATED BY THE RF MAGNETRON SPUTTERING TECHNIQUE

Authors
LEE JK SONG TK JUNG HJ
Citation
Jk. Lee et al., CHARACTERISTICS OF SRBI2TA2O9 THIN-FILMS FABRICATED BY THE RF MAGNETRON SPUTTERING TECHNIQUE, Integrated ferroelectrics, 15(1-4), 1997, pp. 115-125
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
115 - 125
Database
ISI
SICI code
1058-4587(1997)15:1-4<115:COSTFB>2.0.ZU;2-X
Abstract
SBTO thin films were successfully fabricated by r.f. magnetron sputter ing deposition. Bismuth content exists mainly in the form of (Bi2O2)(2 +) at the surface and the elemental bismuth forms at the interface bet ween the SBTO layer and the Pt electrode. The crystal structure of SBT O films grown on the Pt(lll) layer were preferentially c-axis oriented . The Pt/SBTO/Pt capacitor shows Pr-P(boolean AND)r=16.3 mu C/cm(2) a nd Ec=50kV/cm.