ELECTRICAL-PROPERTIES OF FERROELECTRIC-CAPACITOR-GATE SI MOS-TRANSISTORS USING P(L)ZT FILMS

Authors
TOKUMITSU E SHIMAMURA T ISHIWARA H
Citation
E. Tokumitsu et al., ELECTRICAL-PROPERTIES OF FERROELECTRIC-CAPACITOR-GATE SI MOS-TRANSISTORS USING P(L)ZT FILMS, Integrated ferroelectrics, 15(1-4), 1997, pp. 137-144
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
137 - 144
Database
ISI
SICI code
1058-4587(1997)15:1-4<137:EOFSM>2.0.ZU;2-C
Abstract
A ferroelectric-capacitor-gate Si MOSFET which consists of an SiO2/Si MOSFET and a ferroelectric capacitor has been demonstrated. It is show n that memory functions can be obtained by connecting the ferroelectri c capacitor with the gate of MOSFETs. The operation of such devices is similar to that of metal-ferroelectric-semiconductor (MFS) FETs. The large memory window or threshold voltage shift can be obtained with a ferroelectric capacitor which has a large coercive voltage. The memory effect of the device has been demonstrated by showing the drain curre nt change by a previously applied ''write'' pulse at a fixed gate volt age of 0V.