GROWTH AND CHARACTERIZATION OF THIN-FILM DIELECTRICS FOR MICROWAVE APPLICATIONS

Thin films of microwave dielectrics have been prepared by rf sputterin g. When Ti-rich barium titanate is deposited on hot, electroded silico n, the films are amorphous and have a dielectric constant of similar t o 30, have no frequency roll off in dielectric constant below 3 GHz an d show very low voltage dependence. Both Pt/Ta and TiN/Ti barrier laye r electrodes have been studied. The high frequency properties indicate that these titanates should be useful as integrated capacitors for fe ed through, bypass or switched capacitor filters.