PERFORMANCE OF SRBI2TA2O9 FOR LOW-VOLTAGE, NONVOLATILE MEMORY APPLICATIONS

Authors
JONES RE ZURCHER P CHU P TAYLOR DJ ZAFAR S JIANG B GILLESPIE SJ
Citation
Re. Jones et al., PERFORMANCE OF SRBI2TA2O9 FOR LOW-VOLTAGE, NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics, 15(1-4), 1997, pp. 199-210
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
199 - 210
Database
ISI
SICI code
1058-4587(1997)15:1-4<199:POSFLN>2.0.ZU;2-T
Abstract
The performance of SrBi2Ta2O9 for ferroelectric non-volatile memory ap plications is investigated. The temperature dependence of the hysteres is loops, small signal capacitance-voltage measurements, and fatigue r esistance are reported. Increasing temperature accelerates fatigue, bu t excellent fatigue resistance to greater than 10(12) cycles is found for temperatures of 125 degrees C and below. The difference between cu rrent-time curves for switched and unswitched capacitors using high-sp eed pulse measurements indicated the availability of 5.7 mu C/cm(2) fo r 3 V memory operation.