A CRITICAL COMPARATIVE REVIEW OF PZT AND SBT-BASED SCIENCE AND TECHNOLOGY FOR NONVOLATILE FERROELECTRIC MEMORIES

Authors
AUCIELLO O
Citation
O. Auciello, A CRITICAL COMPARATIVE REVIEW OF PZT AND SBT-BASED SCIENCE AND TECHNOLOGY FOR NONVOLATILE FERROELECTRIC MEMORIES, Integrated ferroelectrics, 15(1-4), 1997, pp. 211-220
Citations number
37
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
211 - 220
Database
ISI
SICI code
1058-4587(1997)15:1-4<211:ACCROP>2.0.ZU;2-8
Abstract
A critical comparison is made between the two leading material technol ogies being developed for the first generation of non-volatile ferroel ectric memories. One of them is based on Pb(ZrxTi1-x)O-3 (PZT) and the other on a layered perovskite family of materials, of which the most intensively investigated is Sr1-xBi2+yTa2O9 (SET). Basic scientific an d technological issues, related to the synthesis of thin films and com position-microstructure-property relationships, are discussed in view of materials integration strategies developed to produce capacitors wi th properties suitable for commercial nonvolatile ferroelectric memori es.