FABRICATION AND CHARACTERIZATION OF METAL-FERROELECTRICS-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR USING EPITAXIAL BAMGF4 FILMS GROWN ON SI(111) SUBSTRATES

Metal-ferroelectrics-semiconductor field effect transistors (MFS FETs) were fabricated using ferroelectric BaMgF4 (BMF) films epitaxially gr own on Si(111) substrates and their electrical characteristics were in vestigated. BMF films were grown on Si(111) substrates by using MBE me thod, and n-channel MFS FETs were fabricated on p-type Si(111) substra tes by the conventional photolithographic technique. I-d-V-d and I-d-V -g characteristics of an fabricated MFS FET were measured, and the thr eshold voltage shift was observed by applying a gate voltage. It was a lso demonstrated that the drain current could be gradually changed by applying positive short pulses to the gate of an MFS FET.