PIEZOELECTRIC AND DIELECTRIC AGING IN PB(ZR,TI)O-3 THIN-FILMS AND BULK CERAMICS

Authors
KHOLKIN AL TAGANTSEV AK COLLA EL TAYLOR DV SETTER N
Citation
Al. Kholkin et al., PIEZOELECTRIC AND DIELECTRIC AGING IN PB(ZR,TI)O-3 THIN-FILMS AND BULK CERAMICS, Integrated ferroelectrics, 15(1-4), 1997, pp. 317-324
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
15
Issue
1-4
Year of publication
1997
Pages
317 - 324
Database
ISI
SICI code
1058-4587(1997)15:1-4<317:PADAIP>2.0.ZU;2-B
Abstract
Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O-3 (PZT) t hin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative agi ng rate much higher than that of the dielectric constant, while compar able aging rates of piezoelectric and dielectric constants were found in PZT ceramics. The origin of piezoelectric aging in PZT films was re lated to depolarization of the films rather than to suppression of the domain wall motion as was generally accepted for PZT ceramics.