PROCESS AND PROPERTIES OF PT PB(ZR,TI)O-3/PT INTEGRATED FERROELECTRICCAPACITORS/

Authors
TORII K KAWAKAMI H MIKI H KUSHIDA K ITOGA T GOTO Y KUMIHASHI T YOKOYAMA N MONIWA M SHOJI K KAGA T FUJISAKI Y
Citation
K. Torii et al., PROCESS AND PROPERTIES OF PT PB(ZR,TI)O-3/PT INTEGRATED FERROELECTRICCAPACITORS/, Integrated ferroelectrics, 16(1-4), 1997, pp. 21-28
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
16
Issue
1-4
Year of publication
1997
Pages
21 - 28
Database
ISI
SICI code
1058-4587(1997)16:1-4<21:PAPOPP>2.0.ZU;2-L
Abstract
A one-mask-patterned ferroelectric capacitor memory cell structures de signed with a 0.5-mu m feature size were fabricated. Oxygen plasma tre atment after dry etching decreased the leakage current to as low as as -deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferr oelectric memories as dense as dynamic random access memories will bec ome possible with this technology.