CHARACTERIZATION OF SELF-PATTERNED SRBI2TA2O9 THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS

Authors
UCHIDA H SOYAMA N KAGEYAMA K OGI K SCOTT MC CUCHIARO JD DERBENWICK GF MCMILLAN LD DEARAUJO CAP
Citation
H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SRBI2TA2O9 THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS, Integrated ferroelectrics, 16(1-4), 1997, pp. 41-52
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
16
Issue
1-4
Year of publication
1997
Pages
41 - 52
Database
ISI
SICI code
1058-4587(1997)16:1-4<41:COSSTF>2.0.ZU;2-Y
Abstract
Self-patterned SrBi2Ta2O9 thin films were successfully fabricated from photo-sensitive solutions by means of UV irradiation through photo ma sks. After conventional baking and wet etching the films were annealed . The photo-sensitive SrBi2Ta2O9 solutions give high resolution negati ve-pattern of the mask image down to 1 mu m line width by deep UV irra diation at 900 mJ/cm(2). The capacitor characteristics of the 210 nm t hick films fabricated on the Pt/Ti/SiO2/Si substrates by this process showed 2Pr values of 17 mu C/cm(2), 2Ec of 89 kV/cm, and leakage curre nt densities of 5x10(9) A/cm(2) at 5 V. The films showed no fatigue af ter 1x10(11) switching cycles.