INTEGRATION OF FERROELECTRIC CAPACITORS USING MULTILAYERED ELECTRODE

The ferroelectric capacitors of PZT are fabricated using RuO2/Pt elect rode to examine the electrode effect on ferroelectric properties. PZT films are prepared by metalo-organic decomposition(MOD) on sputter dep osited electrodes. In particular, inductively coupled plasma(ICP) etch er is used to reduce the etching damage. In addition, TiO2 reaction ba rrier layer is employed to retard the degradation of ferroelectric pro perties due to the reaction between a passivation layer and PZT film. The electrical properties of Pt/RuO2/PZT/RuO2/Pt capacitors are compar ed to those obtained from Pt/PZT/Pt and RuO2/PZT/RuO2 capacitors. The better ferroelectric properties are obtained from Pt/RuO2/PZT/RuO2/Pt ferroelectric capacitors. The enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The result implicates RuO2/Pt would be a good electrode for a no nvolatile memory application.