ETCHING EFFECTS TO PZT CAPACITORS WITH RUOX PT ELECTRODE BY USING INDUCTIVELY-COUPLED PLASMA/

The etching damage was studied on lead zirconate titanate (PZT) thin f ilm capacitors with RuOx/Pt multi-layered electrodes. PZT films were d eposited on RuOx/Pt/Ti/SiO2/Si substrates by spin coating with the sol -gel solution and etched by an inductively coupled plasma (ICP) etcher . Etching damage was systematically investigated by varying etching pa rameters such as coil RF power, DC bias to wafer susceptor, and chambe r pressure. Quantitative analysis of etching damage was made in terms of the degree of the coercive field shift (E(shift)) in hysteresis loo ps. In this study, the optimization of etching process for PZT films w as attempted to minimize the etching damage to the ferroelectric capac itors.