Citation
K. Amanuma et T. Kunio, ELECTRICAL CHARACTERIZATION OF SRBI2TA2O9 CAPACITORS FOR NONVOLATILE MEMORY OPERATION, Integrated ferroelectrics, 16(1-4), 1997, pp. 175-182
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
16
Issue
1-4
Year of publication
1997
Pages
175 - 182
Database
ISI
SICI code
1058-4587(1997)16:1-4<175:ECOSCF>2.0.ZU;2-9
Abstract
Pulse response of SrBi2Ta2O9 capacitors was measured for large-scale n
on-volatile memory design. Pulse response depended on capacitor size,
while such a dependence was not observed in hysteresis measurement. As
the reference capacitor in the Sawyer-Tower circuit decrease, the sig
nal voltage This result suggests small bit-line capacitor is preferabl
e for memory design. The possibility of very low-voltage operation was
indicated.