STABILITY OF REACTIVE DC-SPUTTERED IR AND IRO2 THIN-FILMS IN VARIOUS AMBIENTS

Authors
CHEN TS BALU V JIANG B KUAH SH LEE JC CHU P JONES RE ZURCHER P TAYLOR DJ GILLESPIE S
Citation
Ts. Chen et al., STABILITY OF REACTIVE DC-SPUTTERED IR AND IRO2 THIN-FILMS IN VARIOUS AMBIENTS, Integrated ferroelectrics, 16(1-4), 1997, pp. 191-198
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
16
Issue
1-4
Year of publication
1997
Pages
191 - 198
Database
ISI
SICI code
1058-4587(1997)16:1-4<191:SORDIA>2.0.ZU;2-8
Abstract
Ir and IrO2 are potential electrode materials for ferroelectric thin f ilm capacitors. However, some process related issues need to be consid ered before integrating ferroelectric capacitors into memory cells. Th is paper presents the effects of post-deposition annealing on the char acteristics of DC-magnetron sputtered Ir and IrO2 thin films. Film pro perties such as composition, resistivity, crystallinity, adhesion, and microstructure were examined before and after annealing.