A PHYSICALLY-BASED PHENOMENOLOGICAL MODEL USING BOLTZMANN-MATANO ANALYSIS FOR BORON-DIFFUSION FROM POLYCRYSTALLINE SI INTO SINGLE-CRYSTAL SI

Authors
SULTAN A LOBO M BHATTACHARYA S BANERJEE S BATRA S MANNING M DENNISON C
Citation
A. Sultan et al., A PHYSICALLY-BASED PHENOMENOLOGICAL MODEL USING BOLTZMANN-MATANO ANALYSIS FOR BORON-DIFFUSION FROM POLYCRYSTALLINE SI INTO SINGLE-CRYSTAL SI, Journal of electronic materials, 22(9), 1993, pp. 1129-1135
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
9
Year of publication
1993
Pages
1129 - 1135
Database
ISI
SICI code
0361-5235(1993)22:9<1129:APPMUB>2.0.ZU;2-A
Abstract
The diffusion of boron in single crystal Si from a BF2-implanted polyc rystalline Si film deposited on single crystal Si has been accurately modeled. The effective diffusivities of boron in the single crystal Si substrate have been extracted using Boltzmann-Matano analysis and the new phenomenological model for B diffusivity has been implemented in the PEPPER simulation program. The model has been implemented for a ra nge of furnace anneal conditions (800 to 950-degrees-C, from 30 min to 6 h) and implant conditions (BF2 doses varied from 5 x 10(15) to 2 x 10(16) cm-2 at 70 keV).