FE AND TI IMPLANTS IN IN0.52AL0.48AS

Single (200 keV) and multiple energy Fe implants in n-type and Ti impl ants in p-type material were performed in In0.52Al0.48As at both room temperature and 200-degrees-C. For the Fe implants, the secondary ion mass spectrometry profiles showed a severe out-diffusion for all rapid thermal annealing schemes used, independent of the implantation tempe rature. The Fe implant peaks observed after annealing, at 0.8Rp, Rp+DE LTARp and 2Rp (where Rp and DELTARp are range and straggle, respective ly) depth locations in other In-based compounds like InP and InGaAs we re not observed here. On the contrary, Ti implants showed only a sligh t in- and out-diffusion for both room temperature and 200-degrees-C im plants as in the case of InP and InGaAs. The Rutherford backscattering measurements on the annealed samples implanted at 200-degrees-C showe d a crystal quality similar to that of the virgin material. The resist ivity of all the samples after annealing was higher than 10(6) OMEGA-c m.