INFLUENCE OF THE INTERFACE-STATE DENSITY ON THE ELECTRON-MOBILITY IN SILICON INVERSION-LAYERS

The electron inversion-layer mobility in a metal oxide semiconductor f ield effect transistor, as a function of the transverse electric field , has been studied in the temperature range 13-300K for different inte rface-state densities. Experimental data are in excellent agreement wi th a simple semi-empirical model. However, the term attributed by othe r authors to phonon scattering depends on the interface-state density, even at high temperatures, and becomes negative at low temperatures. These facts are shown to be a consequence of the dependence of coulomb scattering on the transverse electric field.