CONTROLLED P-TYPE SB DOPING IN LPE-GROWN HG1-XCDXTE EPILAYERS

A Te-rich liquid-phase-epitaxial growth process is reported whereby re producible Sb-doped layers are prepared with hole concentrations and h ole mobilities ranging from 1.8 x 10(16) to 1.3 x 10(19) cm-3 and 280 to 29 cm2/V s, respectively, at 77K for x-values ranging from 0.23 to 0.29. An effective electronic distribution coefficient for Sb of 0.01 is calculated from the hole concentration at 77K and the concentration of Sb in the growth solution. The process for group Va doping of low- x Hg1-xCdxTe from Te-rich solutions and the procedure for the growth o f a CdZnTe buffer layer on a CdTeSe substrate are described. For Te-ri ch Cd-Zn-Te growth solutions the distribution coefficient of Zn was fo und to be 18. The growth of a structure consisting of an Sb-doped HgCd Te epilayer on a CdZnTe buffer layer lattice matched (DELTAa/a < 10(-4 ) to a CdSeTe substrate has been demonstrated.