ON A HIGH-PURITY GE EDS DETECTOR .2. ICE LAYER FORMATION AND OPTIMIZATION OF DETECTOR DESIGN

Authors
FOITZIK AH SEARS JS XIAO SQ HEUER AH WUNDERLICH W
Citation
Ah. Foitzik et al., ON A HIGH-PURITY GE EDS DETECTOR .2. ICE LAYER FORMATION AND OPTIMIZATION OF DETECTOR DESIGN, Ultramicroscopy, 50(2), 1993, pp. 219-227
Citations number
4
Categorie Soggetti
Microscopy
Journal title
Ultramicroscopy → ACNP
ISSN journal
03043991
Volume
50
Issue
2
Year of publication
1993
Pages
219 - 227
Database
ISI
SICI code
0304-3991(1993)50:2<219:OAHGED>2.0.ZU;2-8
Abstract
Icing rates for a high-purity germanium (HPGe) detector and two Si(Li) EDS detectors were determined by comparing experimental spectra from standard specimens, taken at various times after de-icing, with system atic computer simulations. Our work suggests that a de-iceable HPGe de tector may be the best choice for light-element analysis in the TEM.